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10-FY074PA050SM-M582F38 datasheet copyright vincotech 1 23 jul. 2015 / revision 2 h-bridge switch maximum ratings t j =25c, unless otherwise specified t j = parameter symbol value unit a condition collector-emitter voltage v ces 650 v collector current i c t j = t j max t s = 80 c 43 repetitive peak collector current i crm t p limited by t j max 150 a total power dissipation p tot t j = t j max t s = 80 c 84 w gate-emitter voltage v ges 20 v maximum junction temperature t jmax 175 c flow pack 1 650 v / 50 a 650v igbt h5 and 650v stealth si diode high-efficiency ultra-fast switching frequency integrated temperature sensor low inductance layout solar inverters power supply inverter based welding 10-FY074PA050SM-M582F38 flow 1 12mm housing schematic features target applications types
10-FY074PA050SM-M582F38 datasheet copyright vincotech 2 23 jul. 2015 / revision 2 h-bridge diode module properties parameter symbol unit thermal properties isolation properties isolation voltage v i sol dc voltage t p =2s 4000 v creepage distance min 12,7 mm clearance 8,47 mm comparative tracking index cti >200 c c storage temperature t stg -40+125 operation junction temperature t jop -40+( t jmax - 25) conditions value parameter symbol value unit conditions peak repetitive reverse voltage v rrm 650 v repetitive peak forward current i frm 180 a continuous (direct) forward current i f t j = t jmax t h = 80c 29 a total power dissipation p tot t j = t jmax t h =80c 52 w maximum junction temperature t jmax 175 c
10-FY074PA050SM-M582F38 datasheet copyright vincotech 3 23 jul. 2015 / revision 2 h-bridge switch characteristic values t j = 25 3,3 4 4,7 125 25 1 1,82 2,22 125 2,00 150 - 25 40 125 25 120 125 parameter symbol conditions value unit t j [ c] min typ max static v ge [v] v ce [v] i c [a] v collec tor-emitter saturation voltage v cesat 15 50 v gate-emitter threshold voltage v ge (th) v ge = v ce 0,0005 a gate-emitter leakage c urrent i ges 20 0 na collec tor-emitter c ut-off current i ces 0 650 50 none ? input capacitance c ies f=1 mhz 0 25 internal gate resistance r g 50 25 120 nc reverse transfer capac itance c res 11 gate c harge q g 15 520 25 3000 pf output capacitance c oes 1,13 k/w thermal thermal resistance junc tion to sink r th(j-s) phase-change material ? =3,4w/mk 25 59 125 60 150 60 25 9 125 11 150 11 25 64 125 74 150 76 25 4 125 8 150 9 q rfwd = 0,8 c 25 0,412 q rfwd = 1,8 c 125 0,516 q rfwd = 2,2 c 150 0,555 25 0,170 125 0,303 150 0,337 rise time t r r gon = 8 ? turn-off delay time turn-on delay time t d(on) r goff = 8 ? 15 igbt switching t d(off) fall time t f mws turn-off energy (per pulse) e off 50 ns 300 turn-on energy (per pulse) e on
10-FY074PA050SM-M582F38 datasheet copyright vincotech 4 23 jul. 2015 / revision 2 25 39 125 47 150 49 25 20 125 100 150 117 d i /d t = 4872 a/s 25 0,783 d i /d t = 4560 a/s 125 1,798 d i /d t = 4066 a/s 150 2,183 25 0,133 125 0,376 150 0,466 25 6525 125 3267 150 2773 fwd switching peak recovery current i rrm 15 300 50 a reverse recovery time t rr ns recovered charge q r c reverse recovered energy e rec mws peak rate of fall of recovery current (d i rf /d t ) max a/s inverter diode thermistor 25 2,46 2,6 125 2,03 150 - 25 10 150 - 1,83 k/w thermal resistance junc tion to sink r th(j-s) phase-change material ? =3,4w/mk thermal v reverse leakage c urrent i r 665 a forward voltage v f 30 t j [c] min typ max static i f [a] parameter symbol conditions value unit v r [v] parameter symbol unit v ge [v] v ce [v] i c [a] t j [ c] min typ max conditions value mw rated resistance r deviation of r100 r/r r100=1486 ? 25 22 k? +12 % 200 100 -12 25 k 25 2 mw/k 25 3950 25 3998 k power dissipation p b-value b (25/100) tol. 3% b-value b (25/50) tol. 3% b vincotech ntc reference power dissipation constant
10-FY074PA050SM-M582F38 datasheet copyright vincotech 5 23 jul. 2015 / revision 2 h-bridge switch characteristics typical output characteristics igbt typical output characteristics igbt i c = f( v ce ) i c = f( v ce ) t p = 250 s 25 c t p = 250 s v ge = 15 v t tt t j jj j : :: : 125 c t j = 125 c 150 c v ge from 8 v to 18 v in steps of 1 v typical transfer characteristics igbt transient thermal impedance as function of puls e duration igbt i c = f( v ge ) z th(j-s) = f( t p ) t p = 100 s 25 c d = t p / t v ce = 10 v t tt t j jj j : :: : 125 c r th(j-s) = 1,13 k/w 150 c r th (k/w) (s) 7,12e-02 8,15e+00 1,29e-01 6,00e-01 4,31e-01 9,13e-02 3,15e-01 2,59e-02 1,31e-01 5,80e-03 5,02e-02 8,53e-04 igbt thermal model values 0 10 20 30 40 50 0 1 2 3 4 5 6 7 i i i i c cc c (a) (a) (a) (a) v vv v g e g e g e g e (v) (v)(v) (v) 0 30 60 90 120 150 0 1 2 3 4 5 i i i i c c c c (a) v vv v c e c ec e c e (v) 0 30 60 90 120 150 0 1 2 3 4 5 i i i i c cc c (a) v vv v c e c ec e c e (v) 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 0,5 0,2 0,1 0,05 0,02 0,01 z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) z z z z t h(j t h(j t h(j t h(j - -- - s) s) s) s) (k/w) t tt t p pp p (s) 10 -4 10 -3 10 -2 10 -1 10 10 1 10 2 10 -2 10 -1 10 0 10 1
10-FY074PA050SM-M582F38 datasheet copyright vincotech 6 23 jul. 2015 / revision 2 h-bridge switch characteristics gate voltage vs gate charge igbt v ge = f( q g ) at i c = 50 a 130v 520v 0 2,5 5 7,5 10 12,5 15 0 20 40 60 80 100 120 140 v v v v g e g e g e g e (v) q qq q g gg g (nc)
10-FY074PA050SM-M582F38 datasheet copyright vincotech 7 23 jul. 2015 / revision 2 h-bridge diode characteristics thermistor characteristics typical forward characteristics fwd transient thermal impedance as a function of pulse width fwd i f = f( v f ) z th(j-s) = f( t p ) t p = 250 s 25 c d = t p / t t j : 125 c r th(j-s) = 1,83 k/w 150 c fwd thermal model values r (k/w) (s) 6,05e-02 3,63e+00 1,50e-01 6,48e-01 8,27e-01 7,70e-02 4,06e-01 1,51e-02 2,16e-01 3,45e-03 1,73e-01 7,36e-04 0 15 30 45 60 75 90 0 1 2 3 4 5 i f (a) v f (v) z z z z t h( j t h( j t h( j t h( j - -- - s) s) s) s) (k/w) t tt t p pp p (s) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 thermistor typical temperature characteristic typical thermistor resistance values typical ntc characteristic as a function of temperature r t = f( t ) 0 5000 10000 15000 20000 25000 25 50 75 100 125 r (?) t (c) ntc-typical temperature characteristic
10-FY074PA050SM-M582F38 datasheet copyright vincotech 8 23 jul. 2015 / revision 2 h-bridge switching characteristics figure 1. igbt figure 2. igbt typical swit ching energy losses as a f unction of co llector current typical swit ching energy losses as a f unct ion of ga te resistor e = f( i c ) e = f(r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 300 v t j : 125 c v ce = 300 v t j : 125 c v ge = 15 v 150 c v ge = 15 v 150 c r gon = 8 ? i c = 50 a r goff = 8 ? figure 3. fwd figure 4. fwd typical reverse recovered energy loss as a f unction of collector current typical reverse recovered energy loss as a f unct ion of gat e resist or e rec = f( i c ) e rec = f( r g ) with an induc tive load at 25 c with an inductive load at 25 c v ce = 300 v t j : 125 c v ce = 300 v t j : 125 c v ge = 15 v 150 c v ge = 15 v 150 c r gon = 8 ? i c = 50 a e rec e rec e rec 0 0,2 0,4 0,6 0,8 0 10 20 30 40 50 60 70 80 90 100 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e rec e rec e rec 0 0,15 0,3 0,45 0,6 0 5 10 15 20 25 30 35 e e e e (mws) (mws) (mws) (mws) r rr r g g g g ( (( ( ) )) ) e ee e o n o n o n o n e on e on e ee e o ff o ff o ff o ff e off e off 0 0,3 0,6 0,9 1,2 0 10 20 30 40 50 60 70 80 90 100 e e e e (mws) (mws) (mws) (mws) i ii i c c c c (a) (a)(a) (a) e off e on e on e off e on 0 0,4 0,8 1,2 1,6 0 5 10 15 20 25 30 35 e e e e ( mws) ( mws) ( mws) ( mws) r rr r g g g g ( (( ( ) )) ) e off
10-FY074PA050SM-M582F38 datasheet copyright vincotech 9 23 jul. 2015 / revision 2 h-bridge switching characteristics figure 5. igbt figure 6. igbt typical swit ching t imes as a f unct ion of collector current typical swit ching t imes as a f unct ion of gate resis tor t = f( i c ) t = f( r g ) with an induc tive load at with an inductive load at t j = 150 c t j = 150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a r goff = 8 ? figure 7. fwd figure 8. fwd typical reverse recovery t ime as a f unction of coll ector current typical reverse recovery t ime as a f unct ion of igbt t urn on gat e resist or t rr = f( i c ) t rr = f( r gon ) a t v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 8 ? 150 c i c = 50 a 150 c t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 10 20 30 40 50 60 70 80 90 100 t t t t ( (( ( ? s) s) s) s) i ii i c c c c (a (a(a (a ) )) ) t d(off ) t f t d(on) t r 0,001 0,01 0,1 1 0 5 10 15 20 25 30 35 t t t t ( (( ( ? s) s) s) s) r rr r g g g g ( (( ( ) )) ) t rr t rr t rr 0 0,05 0,1 0,15 0,2 0 5 10 15 20 25 30 35 t t t t rr rr rr rr ( (( ( ? s) s) s) s) r rr r g on g on g on g on ( (( ( ) )) ) t rr t rr t rr 0 0,04 0,08 0,12 0,16 0 10 20 30 40 50 60 70 80 90 100 t t t t r r r r r r r r ( (( ( ? s) s) s) s) i ii i c cc c (a) (a)(a) (a)
10-FY074PA050SM-M582F38 datasheet copyright vincotech 10 23 jul. 2015 / revision 2 h-bridge switching characteristics figure 9. fwd figure 10. fwd typical recovered charge as a f unction of collector current typical recoved charge as a f unct ion of igbt t urn o n gate resistor q r = f( i c ) q r = f( r gon ) at at v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 8 ? 150 c i c = 50 a 150 c figure 11. fwd figure 12. fwd typical peak reverse recovery current current as a f unct ion of collect or current typical peak reverse recovery current as a f unct ion of igbt t urn on gate resist or i rm = f( i c ) i rm = f( r gon ) a t v ce = 300 v 25 c at v ce = 300 v 25 c v ge = 15 v t j : 125 c v ge = 15 v t j : 125 c r gon = 8 ? 150 c i c = 50 a 150 c i rm i rm i rm 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 i i i i r m r m r m r m (a) (a) (a) (a) r rr r g o n g o n g o n g o n ( (( ( ) )) ) q qq q r r r r q r q r 0 0,5 1 1,5 2 2,5 0 5 10 15 20 25 30 35 q q q q r rr r (c) (c) (c) (c) r rr r g o n g o n g o n g o n ( (( ( ) )) ) i ii i rm rmrm rm i rm i rm 0 20 40 60 80 0 20 40 60 80 100 i i i i r m r m r m r m (a) (a) (a) (a) i ii i c c c c (a) (a)(a) (a) q r q r q r 0 0,5 1 1,5 2 2,5 3 0 10 20 30 40 50 60 70 80 90 100 q q q q r rr r ( (( ( ? c) c) c) c) i ii i c c c c (a) (a)(a) (a)
10-FY074PA050SM-M582F38 datasheet copyright vincotech 11 23 jul. 2015 / revision 2 h-bridge switching characteristics figure 13. fwd figure 14. fwd typical rat e of f all of f orward and reverse recover y current as a f unct ion of collect or current typical rate of fall of forward and reverse recover y current as a function of igbt turn on gate resist or d i f /d t ,d i rr /dt = f( i c) d i f /d t ,d i rr /dt = f( r g) at v ce = 300 v 25 c at v ce = 300 v v ge = 15 v t j : 125 c v ge = 15 v r gon = 8 ? 150 c i c = 50 a 0 3000 6000 9000 12000 0 5 10 15 20 25 30 35 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ ? s) s) s) s) r rr r g o n g o n g o n g o n ( (( ( ) )) ) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t 0 2000 4000 6000 8000 10000 0 10 20 30 40 50 60 70 80 90 100 d dd d i i i i /d /d /d /d t t t t (a/ (a/ (a/ (a/ s) s) s) s) i ii i c c c c (a) (a)(a) (a) d i ii i f ff f / // / d t tt t d i ii i r r r rr r r r / // / d t tt t figure 15. igbt reverse bias saf e operating area i c = f( v ce ) at t j = 175 c r gon = 8 ? r goff = 8 ? 0 20 40 60 80 100 120 0 100 200 300 400 500 600 700 i i i i c c c c (a) (a) (a) (a) v vv v c e c e c e c e (v) (v)(v) (v) i ii i c max c maxc max c max v v v v ce ce ce ce max max max max i i i i c cc c m odule m odule m odule m odule i i i i c cc c chip chip chip chip
10-FY074PA050SM-M582F38 datasheet copyright vincotech 12 23 jul. 2015 / revision 2 h-bridge switching definitions t j 150 c r gon 8 ? r goff 8 ? figure 1. igbt figure 2. igbt turn-of f swit ching wavef orms & def init ion of t dof f , t eof f (t eof f = int egrat ing t ime f or eof f ) turn-on s wit ching wavef orms & def init ion of tdon, t eon (t eon = int egrating t ime f or eon) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 50 a i c (100%) = 50 a t doff = 0,076 s t don = 0,060 s t eoff = 0,125 s t eon = 0,152 s figure 3. igbt figure 4. igbt turn-of f swit ching wavef orms & def init ion of t f turn-on swit ching wavef orms & def init ion of tr v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 50 a i c (100%) = 50 a t f = 0,009 s t r = 0,011 s = general conditions == i c 1% v ce 90% v ge 90% -20 0 20 40 60 80 100 120 140 160 -0,1 -0,05 0 0,05 0,1 0,15 0,2 % t tt t (s) (s)(s) (s) t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 2,95 3 3,05 3,1 3,15 3,2 3,25 3,3 % t tt t (s) (s)(s) (s) i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 150 -0,015 -0,005 0,005 0,015 0,025 0,035 0,045 % t tt t ( s) ( s)( s) ( s) v ce i c t f i c 10% i c 90% -25 0 25 50 75 100 125 150 175 200 3 3,02 3,04 3,06 3,08 3,1 % t tt t (s) (s)(s) (s) t r v ce i c
10-FY074PA050SM-M582F38 datasheet copyright vincotech 13 23 jul. 2015 / revision 2 h-bridge switching definitions figure 5. igbt figure 6. igbt turn-of f swit ching wavef orms & def init ion of t eof f turn-on swit ching wavef orms & def init ion of teon p off (100%) = 14,99 kw p on (100%) = 14,99 kw e off (100%) = 0,34 mj e on (100%) = 0,56 mj t eoff = 0,13 s t eon = 0,15 s figure 7. fwd turn-of f swit ching wavef orms & def init ion of t rr v d (100%) = 300 v i d (100%) = 50 a i rrm (100%) = -49 a t rr = 0,117 s i c 1% v ge 90% -25 0 25 50 75 100 125 -0,1 -0,05 0 0,05 0,1 % t tt t (s) (s)(s) (s) p off e off t eoff v ce 3% v ge 10% -25 0 25 50 75 100 125 150 2,9 2,95 3 3,05 3,1 3,15 % t tt t ( s) ( s)( s) ( s) p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -125 -100 -75 -50 -25 0 25 50 75 100 125 3 3,05 3,1 3,15 3,2 % t tt t (s) (s)(s) (s) i d v d fitted
10-FY074PA050SM-M582F38 datasheet copyright vincotech 14 23 jul. 2015 / revision 2 h-bridge switching definitions figure 8. fwd figure 9. fwd turn-on switching waveforms & definition of t qrr (t qrr = integrating time for q rr ) turn-on switching waveforms & definition of t erec (t erec = integrating time for e rec ) i d (100%) = 50 a p rec (100%) = 14,99 kw q rr (100%) = 2,18 c e rec (100%) = 0,47 mj t qrr = 0,26 s t erec = 0,26 s t qrr -100 -50 0 50 100 150 3 3,1 3,2 3,3 3,4 3,5 % t tt t (s) (s)(s) (s) i d q rr -50 -25 0 25 50 75 100 125 150 3 3,05 3,1 3,15 3,2 3,25 3,3 3,35 3,4 % t tt t (s) (s)(s) (s) p rec e rec t erec
10-FY074PA050SM-M582F38 datasheet copyright vincotech 15 23 jul. 2015 / revision 2 date code ul & vinco lot serial wwyy ul vinco lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 0 28,2 g11 2 3 28,2 s11 3 23,55 28,2 therm1 4 28,65 28,2 therm2 5 49,2 28,2 s13 6 52,2 28,2 g13 7 52,2 20,25 dc-2 8 52,2 17,75 dc-2 9 52,2 10,5 dc+ 10 52,2 8 dc+ 11 52,2 0 g14 12 49,2 0 s14 13 43,2 0 ph2 14 40,7 0 ph2 15 38,2 0 ph2 16 14 0 ph1 17 11,5 0 ph1 18 9 0 ph1 19 3 0 s12 20 0 0 g12 21 0 8 dc+ 22 0 10,5 dc+ 23 0 17,75 dc-1 24 0 20,25 dc-1 pin table [mm] in packaging barcode as ordering code & marking name nn-nnnnnnnnnnnnnn-nnnnnnnn outline m582f38 10-FY074PA050SM-M582F38 version without thermal paste 12mm housing text datamatrix m582f38 in datamatrix as ordering code nn-nnnnnnnnnnnnnn nnnnnnnn wwyy ul vinco lllll ssss
10-FY074PA050SM-M582F38 datasheet copyright vincotech 16 23 jul. 2015 / revision 2 rt ntc - - thermistor id igbt fwd component identification t11,t12,t13,t14 d11,d12,d13,d14 comment 650v 650v voltage current function 50a h-bridge switch 30a h-bridge diode pinout
10-FY074PA050SM-M582F38 datasheet copyright vincotech 17 23 jul. 2015 / revision 2 disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. standard packaging quantity (spq) sample handling instruction 100 >spq standard 10-FY074PA050SM-M582F38-d2-14 23 jul. 2015 document no.: date: modification: pages

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